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N-Channel MOSFET
N-Channel MOSFET
N MOSFET(N 型金属 - 氧化物 - 半导体场效应晶体管)是一种以电子为主要载流子的电压驱动型半导体器件,核心由栅极(G)、源极(S)、漏极(D)及栅极与沟道间的绝缘氧化层构成,通过栅极施加正向电压并超过阈值电压时形成 N 型导电沟道,实现源漏极间电流的精准调控,它具备输入阻抗极高、开关速度快、导通电阻低、功耗小、集成度高的优势,广泛应用于开关电源、数字芯片(如 CPU、MCU)、电机驱动、逆变器、射频放大器等电子电路中,是现代电子设备中核心的开关与放大元件。
Product Name Package VDS(max)(V) ID(max)(A) PD(W) VGS(max)(V) RDS(on)(typ)(@10V) (mΩ) RDS(on)(typ)(@4.5V)(mΩ)
HND100N11AX TO-252 100 59 ±25 11 -
HND100N18AX TO-252 100 40 ±20 18 -
HND100N18AX TO-252 100 40 ±20 18 -
HND30N017AX TO-252 30 183 ±20 1.7 2.55
HND30N017AX TO-252 30 183 ±20 1.7 2.55
HND30N023AX TO-252 30 180 ±20 2.3 3.2
HND30N023AX TO-252 30 180 ±20 2.3 3.2
HND30N025AX TO-252 30 150 ±20 2.5 3.6
HND30N025AX TO-252 30 150 ±20 2.5 3.6
HND30N028AX TO-252 30 110 ±20 2.8 4.1
HND30N028AX TO-252 30 110 ±20 2.8 4.1
HND30N034AX TO-252 30 100 ±20 3.4 5

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