Products
Products
当前位置:
/
/
/
N-Channel MOSFET
N-Channel MOSFET
N MOSFET(N 型金属 - 氧化物 - 半导体场效应晶体管)是一种以电子为主要载流子的电压驱动型半导体器件,核心由栅极(G)、源极(S)、漏极(D)及栅极与沟道间的绝缘氧化层构成,通过栅极施加正向电压并超过阈值电压时形成 N 型导电沟道,实现源漏极间电流的精准调控,它具备输入阻抗极高、开关速度快、导通电阻低、功耗小、集成度高的优势,广泛应用于开关电源、数字芯片(如 CPU、MCU)、电机驱动、逆变器、射频放大器等电子电路中,是现代电子设备中核心的开关与放大元件。
Product Name Package VDS(max)(V) ID(max)(A) PD(W) VGS(max)(V) RDS(on)(typ)(@10V) (mΩ) RDS(on)(typ)(@4.5V)(mΩ)
HND650R650AU TO-252 650 7 ±30 650 -
HND40N021A8G TO-252 40 140 ±20 2.1 -
HND40N021A8G TO-252 40 140 ±20 2.1 -
HND40N035AX TO-252 40 80 ±20 3.5 -
HND40N035AX TO-252 40 80 ±20 3.5 -
HND60N027AX TO-252 60 130 ±20 2.7 -
HND60N027AX TO-252 60 130 ±20 2.7 -
HND80N04A9G TO-252 80 120 ±20 4 -
HND80N04A9G TO-252 80 120 ±20 4 -
HND80N048B9G TO-252 80 100 ±20 4.8 -
HND80N048B9G TO-252 80 100 ±20 4.8 -
HND85N15AX TO-252 85 32 ±20 15 -

全国服务热线

0755-86119621

深圳市宝安区西乡街道桃源社区桃源居一区1号综合楼514

传真:0755-26965316

邮箱:sales@hns-semi.com

扫一扫关注我们

Copyright © 2020 Guangdong Huaban Semiconductor Co., Ltd.All Right Resrrved 粤ICP备20034931号
The relevant website materials and resources of this website are all from the Internet. If there is any infringement, please inform us immediately, and we will delete them within 24 hours*