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N-Channel MOSFET
N-Channel MOSFET
N MOSFET(N 型金属 - 氧化物 - 半导体场效应晶体管)是一种以电子为主要载流子的电压驱动型半导体器件,核心由栅极(G)、源极(S)、漏极(D)及栅极与沟道间的绝缘氧化层构成,通过栅极施加正向电压并超过阈值电压时形成 N 型导电沟道,实现源漏极间电流的精准调控,它具备输入阻抗极高、开关速度快、导通电阻低、功耗小、集成度高的优势,广泛应用于开关电源、数字芯片(如 CPU、MCU)、电机驱动、逆变器、射频放大器等电子电路中,是现代电子设备中核心的开关与放大元件。
Product Name Package VDS(max)(V) ID(max)(A) PD(W) VGS(max)(V) RDS(on)(typ)(@10V) (mΩ) RDS(on)(typ)(@4.5V)(mΩ)
HND150N64AG TO-252 150 15 ±20 64 -
HND30N04A8G TO-252 30 75 ±20 4 5.6
HND30N04A8G TO-252 30 75 ±20 4 5.6
HND40N02AG TO-252 40 120 ±20 2 2.5
HND40N02AG TO-252 40 120 ±20 2 2.5
HND40N025AX TO-252 40 96 ±20 2.5 4.2
HND40N025AX TO-252 40 96 ±20 2.5 4.2
HND40N047ARG TO-252 40 65 ±20 4.7 6.6
HND40N047ARG TO-252 40 65 ±20 4.7 6.6
HND60N024AX TO-252 60 138 ±20 2.4 3
HND60N024AX TO-252 60 138 ±20 2.4 3
HND60N038BX TO-252 60 91 ±20 3.8 5

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